In a world fixated on the race for superior artificial intelligence (AI), Chinese scientists have cracked the code to memory speeds once deemed impossible – with a device smaller than a grain of rice.
Researchers at Fudan University on Thursday unveiled “Poxiao”, or Dawn, the fastest flash memory ever created, which can erase and rewrite data in 400 picoseconds. One picosecond is one trillionth of a second.
While the existing prototype holds only kilobytes – barely enough to display this story – its revolutionary design shatters the speed barriers of modern storage by 100,000 times, promising a future where AI brains can read and write as fast as they think.
The breakthrough discovery of Poxiao, published in the journal Nature, is tipped to reshape the semiconductor industry and accelerate advancements in AI-driven computing
the Fudan research team has developed a novel method called “2D-enhanced hot-carrier injection.” This allows electrons to transition instantly from low-speed to high-speed states without any delay.